Structural and interfacial properties of large area n-a-Si:H/i-a-Si:H/p-c-Si heterojunction solar cells
作者： Özlem Pehlivan , Deneb Menda , Okan Yılmaz , Alp Osman Kodolbaş , Orhan Özdemir
DOI: 10.1016/J.MSSP.2014.02.002
关键词:
摘要: Abstract Growth of hydrogenated amorphous silicon in a doping inversed heterojunction solar cell (n-a-Si:H/i-a-Si:H/p-c-Si) interface was investigated by High Resolution Transmission Electron Microscopy (HR-TEM), Spectroscopic Ellipsometry (SE), Fourier Transform Infrared Attenuated Total Reflection spectroscopy (FTIR-ATR) and current–voltage (I–V) measurements. Effective Medium Approximation (EMA) to the SE used describe breakage epi-Si evolution mixture microcrystalline phases. Fabricated cells were characterized dark light I–V measurements at Standard Test Conditions. By improving cleaning deposition conditions, with 9.2% efficiency over 72 cm2 total active area obtained on p-type c-Si wafers.
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