作者: Sean Hearne , Greg Hughes
DOI: 10.1016/S0169-4332(97)00508-4
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摘要: Abstract The results of scanning tunnelling spectroscopy (STS) studies wet chemical sulphur passivated InP(100) surfaces are presented. aim the study was to attempt establish a more quantitative measure surface passivation using STM. Current voltage ( I-V ) spectroscopic plots for and native oxide displayed distinct differences previously reported GaAs(100) surfaces. distance I-S both unpassivated InP accompanying apparent barrier height (φ A measurements presented along with justification results. For reference purposes, φ Au(111) were made validity technique in air. composition before after is determined by X-ray photoelectron (XPS) measurements.