Amorphous silicon thin-film transistors with field-effect mobilities of 2 cm2/V s for electrons and 0.1 cm2/V s for holes
作者： Lin Han , Prashant Mandlik , Kunigunde H. Cherenack , Sigurd Wagner
DOI: 10.1063/1.3119636
关键词:
摘要: A new gate dielectric material is used to fabricate hydrogenated amorphous-silicon (a-Si:H) thin-film transistors (TFTs) with high field-effect mobilities. The a homogeneous SiO2-silicone hybrid, which deposited by plasma-enhanced chemical vapor deposition system at nominal room temperature. This results in a-Si:H TFTs measured mobilities of ∼2 cm2/V s for electrons and ∼0.1 cm2/V s holes.
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