作者: M. N. Amalina , N. A. Rasheid , M. Rusop
DOI: 10.1155/2012/637637
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摘要: In our experiments, we provide a new approach for depositing CuI (inorganic compound) thin films using the mister atomizer technique. The solution was sprayed into fine droplets argon as carrier gas at different concentrations. 50ml all samples with substrate temperature constant 50°C during deposition process. result shows that film properties strongly depend on its precursor concentration. structural were characterized by XRD strong (111) orientation films. FESEM images revealed deposited uniform existence of nanostructured particle. EDX measurement confirms Cu:I in will improve penetration p-type between mesoporous matrix TiO2 film. Promising conductivity value about 10° S cm-1 obtained this method. Low transmittance below 50% observed band gap energy here 2.82 eV and 2.92 which is much smaller than reported 3.1 eV.