作者: Mordehai Heiblum
DOI: 10.1016/0038-1101(81)90029-0
关键词:
摘要: Abstract A family of novel three-terminal devices which relies on the transfer a quasi-monoenergetic hot electron beam through thin base is described. The are similar in principle to proposed tunneling amplifier by Mead early sixties (“Cold Cathode” or “Metal Base” amplifiers). Results reviewed and probable reasons for poor performances pointed out. It predicted that, with proper choice parameters, metal-base amplifiers can operate as switches, negative resistance continuous subpicosecond range. Two subclasses described: emitter (THETA), major part work, nontunneling (BHETA) amplifiers. In THETA metal-oxide-metal-oxide-metal (MOMOM), MOM-semiconductor (MOMS), heterojunctions Members BHETA generate beams injecting electrons an n + − metal- junctions, include variety metals semiconductor combinations. Very films required these (oxides ∼15 A, ∼100 semiconductors A). molecular epitaxy technique lattice matching considerations pinhole free metal minimum interface states. Sputter-oxidation methods needed oxide growth. Systems combine features availability microfabrication make feasible today.