Growth and anisotropy of transport properties of CuGaSe2 single crystals.
作者： M. Mobarak , M. Ashari , M.M. Nassary , S.G. Fatma
DOI: 10.1016/J.HELIYON.2018.E00952
关键词:
摘要: Abstract Single crystals of C u G a S e 2 are prepared by technique based on the vertical Bridgman procedure. The crystal chemical and phase compositions were identified using dispersive X-ray fluorescence spectrometry diffraction data analysis, respectively. Hall effect electrical conductivity determined in terms temperature, parallel orthogonal to layer surface, parameters proved be strongly anisotropic. From carried out measurements, different such like carrier mobilities, concentration, relaxation time, diffusion coefficient, length for both, majority carriers minority estimated.
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