Interfacial reactions of Gd- and Nb-oxide based high-k layers deposited by aqueous chemical solution deposition
作者： D. Dewulf , N. Peys , S. Van Elshocht , G. Rampelberg , C. Detavernier
DOI: 10.1016/J.MEE.2011.03.045
关键词:
摘要: In this work, ultrathin layers of GdOx, NbOx and GdNbOx, deposited with ACSD have been investigated. Because the high temperature anneals utilized in process flow electronic devices, interactions high-k materials substrate are analyzed. The GdNbOx on SiO"2 Al"2O"3 annealed an oxidizing inert atmosphere studied by XRD, GATR-FTIR ellipsometry to assess layer-substrate crystallization behavior. With temperatures up 900^oC, some minor SiO"2/Si substrates no interaction were observed. At 1000^oC, however, more intense both ambients observed (severe silicate formation, interlayer regrowth Al"2O"3). HT-XRD shows that all crystallized well below 900^oC. It is concluded could be a advantageous material, compared its monometal counterparts, based limited at oxidative ambient.
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