Internal photoemission of electrons and holes from (100)Si into HfO2
作者： V. V. Afanas’ev , A. Stesmans , F. Chen , X. Shi , S. A. Campbell
DOI: 10.1063/1.1495088
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摘要: The electron energy band alignment at the Si/HfO2 interfaces with different interlayers (Si3N4, SiON, and SiO2) is directly determined using internal photoemission of electrons holes from Si into Hf oxide. Irrespective interlayer type, barrier for valence was found to be equal 3.1±0.1 eV, yielding conduction offset 2.0±0.1 eV. Photoemission effectively suppressed by SiON SiO2 interlayers, yet it observed occur across Si3N4 a 3.6±0.1 eV, which corresponds 2.5±0.1 eV. HfO2 gap width 5.6 eV, thus derived offsets, coincides bulk value obtained oxide photoconductivity spectra.
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