Structural investigations of CuInSe2 epitaxial layers on {110}- and {100}-oriented GaAs Substrates
作者： A. Tempel , B. Schumann , K. Kolb , G. Kühn
DOI: 10.1016/0022-0248(81)90509-1
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摘要: Abstract Epitaxial layers of CuInSe 2 on {110}- and {100}-oriented GaAs substrates were deposited by flash evaporation investigated using the RHEED technique. The temperature range epitaxial was found to be 720–920 K. relationships expected from geometrical considerations are realized in growth process, but kinds relation having smallest misfit preferred. In grown a superlattice structure occurs.
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