摘要: Development of advanced active regions for semiconductor diode lasers was the main direction which gave largest contribution to enormous progress in various applications. With each new approach device design, and fabrication technology, properties greatly improved and, turn, a strong push development systems sometimes, directions branches industry. The first step proposal current-injection their realization. decisive beginning use real industrial applications concept double heterostructures offered possibility fabricate devices, with low threshold, current density allowing continuous wave operation at room temperature. Further associated effects size quantization heterostructures. Fig.1 illustrates reducing dimensionality region when threshold is taken as Figure merit [1]. By we mean minimum laser necessary reach population inversion overcome internal external losses achieve modal gain.
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