In situ electrical characterization of palladium-based single electron transistors made by electromigration technique

摘要: We report the fabrication of single electron transistors (SETs) by feedback-controlled electromigration palladium and palladium-nickel alloy nanowires. have optimized a gradual process for obtaining devices consisting three terminals (source, drain gate electrodes), which are capacitively coupled to metallic cluster nanometric dimensions. This metal nanocluster forms into inter-electrode channel during constitutes active element each device, acting as quantum dot that rules flow between source electrodes. The charge transport as-fabricated shows Coulomb blockade characteristics conductance can be modulated electrostatic gating. thus achieved in situ measurement palladium-based SETs inside liquid helium cryostat chamber.