Co-optimisation of the emitter region and the metal grid of silicon solar cells

摘要: The procedure for the simultaneous optimisation of dopant density profile and front metal grid silicon solar cells is illustrated with representative cases laboratory commercial devices. Contour plots saturation current photo-generated phosphorus doped emitter regions are calculated as a function thickness concentration, particular case Gaussian profiles. To expose competing factors surface bulk recombination, shading series resistance, other device assumed ideal, that is, loss-less. contour conversion efficiency indicate relatively thick emitters optimum if passivation available, whereas thin, heavily preferable in absence passivation. Copyright © 2000 John Wiley & Sons, Ltd.