作者: Ying-Jie Lu , Chong-Xin Shan , Zhen-Xiang Zhou , Ying-Lei Wang , Bing-Hui Li
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摘要: Electrically pumped lasing has been one of the most challenging issues for random lasers. Since holes are rare in semiconductors, hole injection is necessary electrically Here this article, by employing p-type diamond synthesized via a temperature gradient method under high-pressure and high-temperature conditions as source, observed from p-Mg0.35Zn0.65O/n-ZnO core–shell nanowire structures. The mechanism can be attributed to recombination electrons nanowires with injected diamond.