Electrical and structural properties of boron and phosphorus co-doped diamond films

作者: X.J Hu , R.B Li , H.S Shen , Y.B Dai , X.C He

DOI: 10.1016/J.CARBON.2004.01.054

关键词:

摘要: … As an investigative test for the preparation of co-doped diamond films, we choose the donor dopant phosphorus as one kind of dopant and the smaller atomic radius boron as another …

参考文章(26)
F. Fontaine, C. Uzan‐Saguy, B. Philosoph, R. Kalish, BORON IMPLANTATION/IN SITU ANNEALING PROCEDURE FOR OPTIMAL P-TYPE PROPERTIES OF DIAMOND Applied Physics Letters. ,vol. 68, pp. 2264- 2266 ,(1996) , 10.1063/1.115879
R. Kalish, C. Uzan‐Saguy, A. Samoiloff, R. Locher, P. Koidl, Doping of polycrystalline diamond by boron ion implantation Applied Physics Letters. ,vol. 64, pp. 2532- 2534 ,(1994) , 10.1063/1.111564
S. Prawer, A. Hoffman, R. Kalish, Ion beam induced conductivity in chemically vapor deposited diamond films Applied Physics Letters. ,vol. 57, pp. 2187- 2189 ,(1990) , 10.1063/1.103931
A Reznik, C Uzan-Saguy, R Kalish, Effects of point defects on the electrical properties of doped diamond Diamond and Related Materials. ,vol. 9, pp. 1051- 1056 ,(2000) , 10.1016/S0925-9635(00)00225-9
Johan F Prins, Ion implantation of diamond for electronic applications Semiconductor Science and Technology. ,vol. 18, ,(2003) , 10.1088/0268-1242/18/3/304
Y. Showa, Y. Nakamura, T. Izumi, M. Deguchi, M. Kitabatake, T. Hirao, Y. Mori, A. Hatta, T. Ito, A. Hiraki, Formation of paramagnetic defects in CVD diamond films (ESR study) Thin Solid Films. pp. 275- 278 ,(1996) , 10.1016/0040-6090(96)08651-8
N. Casanova, E. Gheeraert, A. Deneuville, C. Uzan-Saguy, R. Kalish, ESR Study of Phosphorus Implanted Type IIa Diamond Physica Status Solidi (a). ,vol. 181, pp. 5- 10 ,(2000) , 10.1002/1521-396X(200009)181:1<5::AID-PSSA5>3.0.CO;2-F
Toshihiko Nishimori, Koji Nakano, Hitoshi Sakamoto, Yuji Takakuwa, Shozo Kono, n-type high-conductive epitaxial diamond film prepared by gas source molecular beam epitaxy with methane and tri-n-butylphosphine Applied Physics Letters. ,vol. 71, pp. 945- 947 ,(1997) , 10.1063/1.119922