Towards Understanding of Gold Interaction with AIII-BV Semiconductors at Atomic Level

摘要: AIII-BV semiconductors have been considered for decades to be a promising material in overcoming the limitations of silicone semiconductor devices. One important aspects within technology are gold-semiconductor interactions on nanoscale, since Au is widely used catalyze growth nanostructures. We report chemical atoms with crystals by an investigation nanostructures formation process thermally-induced self-assembly various surfaces, and this means atomically resolved HAADF STEM measurements. found that consequence surface diffusion nucleation adatoms produced induced reactions surfaces. Only InSb crystal we there efficient into bulk, which experimentally studied Machine Learning image quantification. The dissolution lattice has additionally characterized DFT calculations inclusion finite temperature effects. Furthermore, based stoichiometry grown, effective number needed release one AIII metal atom estimated. experimental finding reveals difference In- Ga-based groups semiconductors. Our comprehensive systematic studies uncover details at atomic level sensitivity.