作者: R. N. P. Choudhary , B. B. Arya
DOI: 10.1007/S10854-021-05743-7
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摘要: In this communication, preliminary structural and detailed electrical characteristics of the CaSnO3/CaSeO3-modified Bi0.5Na0.5TiO3 ceramics a general chemical composition (1–2x) [Bi0.5Na0.5TiO3] + x (CaSnO3) + x (CaSeO3) with x = 0, 0.05, 0.10, 0.15, has been prepared by high-temperature solid-state reaction method calcination sintering temperature 925 °C 950 °C, respectively, for 5 h. Structural parent compound have significantly been tailored addition equal percentage CaSnO3, CaSeO3 over wide range (25–400 °C) as well frequency (1 kHz–1 MHz). Room-temperature X-ray diffraction (XRD) analysis confirms development single-phase (with rhombohedral symmetry) very small amount impurity phase in higher concentrations (x). dielectric spectroscopy, two peaks are observed at around the temperatures 210 °C 320 °C indicating multiple transitions different types including ferroelectric to paraelectric through anti-ferroelectric. Impedance analysis data exhibits both negative/and positive coefficient resistance of materials. The Nyquist plots determine grain boundary effect capacitive resistive properties materials, also non-Debye type relaxation. room-temperature hysteresis loop existence ferroelectricity compounds where as the leakage current Ohmic behavior