Precise in situ thickness analysis of epitaxial graphene layers on SiC(0001) using low-energy electron diffraction and angle resolved ultraviolet photoelectron spectroscopy
作者： C. Riedl , A. A. Zakharov , U. Starke
DOI: 10.1063/1.2960341
关键词:
摘要: We demonstrate an easy and practical method for the thickness analysis of epitaxial graphene on SiC(0001) that can be applied continuously during preparation procedure. Fingerprints in spot intensity spectra low energy electron diffraction (LEED) allow exact determination number layers first three layers. The LEED data have been correlated with electronic bandstructure around K¯-point Brillouin zone as investigated by laboratory based angle resolved ultraviolet photoelectron spectroscopy using He II excitation. morphology homogeneity analyzed microscopy.
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