Oxidation of Silicon Carbide
作者： PAUL J. JORGENSEN , MILTON E. WADSWORTH , IVAN B. CUTLER
DOI: 10.1111/J.1151-2916.1959.TB13582.X
关键词:
摘要: The rate of oxidation of silicon carbide was measured in an atmosphere of dry oxygen between 900 and 1600C. The rate was studied by using a thermogravimetric apparatus and was …
sci-hub.se 参考文章(6)
G.D. Preston, L.L. Bircumshaw, LI. Studies on the oxidation of metals.—Part IV. The oxide film on aluminium Philosophical Magazine Series 1. ,vol. 22, pp. 654- 665 ,(1936) , 10.1080/14786443608561716
Keith James Laidler, Samuel Glasstone, Henry Eyring, The theory of rate processes : the kinetics of chemical reactions, viscosity, diffusion and electrochemical phenomena McGraw-Hill. ,(1941)
Hiroshige SUZUKI, A study of the oxidation of pure silicon carbide powders Journal of the Ceramic Association, Japan. ,vol. 65, pp. 88- 93 ,(1957) , 10.2109/JCERSJ1950.65.736_88
S. D. BROWN, S. S. KISTLER, Devitrification of High‐SiO2 Glasses of the System Al2O3‐SiO2 Journal of the American Ceramic Society. ,vol. 42, pp. 263- 270 ,(1959) , 10.1111/J.1151-2916.1959.TB12951.X
A. G. VERDUCH, Kinetics of Cristobalite Formation from Silicic Acid Journal of the American Ceramic Society. ,vol. 41, pp. 427- 432 ,(1958) , 10.1111/J.1151-2916.1958.TB12890.X
GUY ERVIN, Oxidation Behavior of Silicon Carbide Journal of the American Ceramic Society. ,vol. 41, pp. 347- 352 ,(1958) , 10.1111/J.1151-2916.1958.TB12932.X