作者: S. C. Jain , W. Geens , A. Mehra , V. Kumar , T. Aernouts
DOI: 10.1063/1.1352677
关键词:
摘要: Most conducting organic materials have a background p-type doping varying in the range 1015–1017 cm−3. We report results of theoretical and experimental study carrier transport p-doped Schottky diodes. The theory given this article shows that doped material with ohmic contacts current is at low voltages. If contact cathode replaced by an Al varies exponentially applied voltage V. changes to space charge limited (SCLC) high which change takes place depends on concentrations. In SCLC regime according well-known V2 law if there are no traps mobility independent electric field. either trapping or effect field important, as Vm, where m>2. investigated experimentally I–V characteristics diodes fabricated using PPV-based oligomer 2,5-di-n...