Modelling of Terahertz Planar Schottky Diodes

摘要: This thesis deals with the modelling of THz planar Schottky diodes, focusing on analyses geometry- dependent parasitics and diode chip thermal management. Moving towards higher operating frequencies, electromagnetic couplings pose significant limitations performance. In this work, a model loss at high frequencies for diodes is developed, specifically ohmic losses in cathode buffer mesa analysed. As result, eddy current, skin proximity effects have been identified as important mechanisms mesa. provides an explanation to strong frequency dependency series resistance, which not explainable using conventional resistance models. Due current crowding effect, upper boundary buffer-layer thickness approximately one skin depth frequency, whereas lower limited by spreading DC. In addition loss, parasitic capacitance inductance inherently limit power coupling junction. A developed analyse limitation, i.e studying resonance requencies function geometry. Analysis pad-to-pad distance presented. Result shows that there a trade-off between inductance, optimising junction. Based layout doublers Jet Propulsion Laboratory (JPL), systematic analysis multiplier performed. Taking temperature-dependent material properties into consideration, result 200 GHz order 10^3 K/W. Meanwhile, time constant more than tens milliseconds. The simulation verified through imaging infrared microscope. Taking step further, self-consistent electro-thermal proposed. matrix approach, linear-temperature approximation resistance. Compared circuit without model, better agreement measured i.e. within 5% conversion efficiency.