Integrated circuit devices including vertical channel transistors with shield lines interposed between bit lines and methods of fabricating the same

作者: Hyun-Woo Chung , Hui-jung Kim , Yong-chul Oh , Yoo-Sang Hwang

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摘要: An integrated circuit device includes a plurality of pillars protruding from substrate in first direction. Each the source/drain regions opposite ends thereof and channel region extending between regions. A conductive bit lines extends on adjacent second direction substantially perpendicular to shield such that each ones lines. Related fabrication methods are also discussed.

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