Temperature dependent diode and photovoltaic characteristics of graphene-GaN heterojunction
作者： Golap Kalita , Muhammad Dzulsyahmi Shaarin , Balaram Paudel , Rakesh Mahyavanshi , Masaki Tanemura
DOI: 10.1063/1.4992114
关键词:
摘要: Understanding the charge carrier transport characteristics at graphene-GaN interface is of significant importance for fabrication efficient photoresponsive devices. Here, we report on temperature dependent diode and photovoltaic a graphene/n-GaN heterostructure based Schottky junction. The heterojunction showed rectifying action with photoresponsivity in ultra-violet wavelength. current-voltage device were investigated under dark light illumination changes temperature. Under conditions, an increase forward bias current as well saturation was observed, decrease ideality factor obtained light, open circuit voltage (Voc) short density (Jsc) incr...
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