作者: Eli Kapon , Frank Reinhardt , Giorgio Biasiol , Anders Gustafsson
DOI: 10.1016/S0169-4332(97)00461-3
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摘要: Abstract The surface and interface properties of self-ordered quantum well, wire dot GaAs/AlGaAs InGaAs/AlGaAs structures grown by low pressure organometallic chemical vapor deposition (OMCVD) on V-grooved substrates are described. Transmission electron microscopy as well cross sectional top atomic force in air employed to investigate the self ordering mechanisms these nanostructures. OMCVD patterned leads step-flow growth with monolayer steps oriented perpendicular grove edges nanofacets at bottom grooves. These ordered, surfaces form basis for formation AlGaAs InGaAs wells wires whose size shape determined composition conditions. V-groove reveal quasi-periodic facet undulations, suggesting dot-like providing three-dimensional confinement.