Electronic structure and metal-insulator transitions in Ti and V oxides
作者： I. Hase , A. Fujimori , H. Namatame , Y. Fujishima , Y. Tokura
DOI: 10.1016/0921-4526(93)90790-D
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摘要: Abstract The electronic structures of various Ti and V oxides have been studied by photoemission X-ray absorption spectroscopy. For LaxSr1−xTiO3, electron doping induces new feature within the band gap SrTiO3. 3d1 systems, as Hubbard collapses U/W becomes small, a spectral grows around Fermi level.
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