作者: Peng Gao , Jason Britson , Christopher T. Nelson , Jacob R. Jokisaari , Chen Duan
DOI: 10.1038/NCOMMS4801
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摘要: In thin film ferroelectric devices, switching of ferroelastic domains can significantly enhance electromechanical response. Previous studies have shown disagreement regarding the mobility or immobility domain walls, indicating that behaviour strongly depends on specific microstructures in systems. Here we study dynamics individual Pb(Zr0.2,Ti0.8)O3 films under electrical and mechanical excitations by using situ transmission electron microscopy phase-field modelling. We find be effectively permanently stabilized dislocations at substrate interface while similar free surfaces without pinning removed either electric stress fields. For both switching, is found to occur most readily highly active needle points domains. Our results provide new insights into understanding polarization as well engineering devices.