Electronic Structure Analysis of USiO

作者: Osman Murat Özkendir

DOI: 10.1088/0253-6102/53/5/21

关键词:

摘要: Uranium is a member of Actinides and plays important role in nuclear science technology. Electronic structural investigations actinide compounds attract major interest science. The electronic structure chemical bonding coffinite USiO4 are investigated by X-ray Absorption Fine Structure spectroscopy (XAFS). U L3- edge absorption spectrum compared with L3-edge spectra UO2 UTe due to their different structures. study presents XANES (x-ray Near-Edge Structure) Extended XAFS (EXAFS) calculations thin films. full multiple scattering approach has been applied the calculation L3 USiO4, UTe, based on choices one electron potentials according coordinations using real space method FEFF 8.2 code.

参考文章(9)
S.C. Tsang, R. Burch, S. Nishiyama, D. Gleeson, N.A. Cruise, A. Glidle, V. Caps, Nanoscopic tin oxide films on mesoporous silica as novel catalysts for hydrogen transfer reactions Nanostructured Materials. ,vol. 12, pp. 999- 1002 ,(1999) , 10.1016/S0965-9773(99)00286-X
A.J.Klein Haneveld, F. Jellinek, The crystal structure of stoichiometric uranium ditelluride Journal of the Less Common Metals. ,vol. 21, pp. 45- 49 ,(1970) , 10.1016/0022-5088(70)90163-3
J. Schoenes, O. Vogt, J. Löhle, F. Hulliger, K. Mattenberger, Variation of f-electron localization in diluted US and UTe. Physical Review B. ,vol. 53, pp. 14987- 14995 ,(1996) , 10.1103/PHYSREVB.53.14987
P. Serrini, V. Briois, M.C. Horrillo, A. Traverse, L. Manes, Chemical composition and crystalline structure of SnO2 thin films used as gas sensors Thin Solid Films. ,vol. 304, pp. 113- 122 ,(1997) , 10.1016/S0040-6090(97)00219-8
A. L. Ankudinov, J. J. Rehr, RELATIVISTIC CALCULATIONS OF SPIN-DEPENDENT X-RAY-ABSORPTION SPECTRA Physical Review B. ,vol. 56, pp. 1712- 1715 ,(1997) , 10.1103/PHYSREVB.56.R1712
A.P. Shpak, A.E. Grechanovsky, A.S. Lytovchenko, G.V. Legkova, S.Yu. Sayenko, Influence of temperature and uranium on the radiation stability of zircon Journal of Nuclear Materials. ,vol. 347, pp. 73- 76 ,(2005) , 10.1016/J.JNUCMAT.2005.07.007