作者: H Yamauchi , M Karppinen , K Fujinami , T Ito , H Suematsu
DOI: 10.1088/0953-2048/11/10/022
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摘要: Essentially single-phase Hg-1223 and Cu-1223:P samples in wide hole-doping ranges were successfully synthesized by a high-pressure (5 GPa) technique utilizing internal and/or external oxidizing agents subsequent post-annealings performed thermobalance. The level of the as-synthesized was found to be overdoped side for both phases thermoelectric power measurements. values as low 107 K 67 obtained samples, respectively. calculated from measured M versus H data employing, respectively, Bean model two different criteria: (at ) (as ). It that heavier doped hole concentration was, more improved characteristics phases. This tendency same using either criterion. improvement with increasing especially profound case Cu-1223:P: sample K, probably being close optimally state, poor reported Bi-2212, while an superior K. mechanisms well usefulness observed phenomena are discussed.