作者: Gennadi A. Emelchenko , Vladimir Masalov , Eduard Samarov , Alexander Grusintsev , Eugeny Yakimov
DOI: 10.1117/12.545377
关键词:
摘要: ZnO infiltration technology was developed by chemical deposition from solution in to a three-dimensional opal lattice, samples of the - composites were prepared with predominating UV emission at room temperature. The embedding degree checked up sample weight and shift spectral position reflection maximum (stop band). both ways accordance one another. optimal synthesis conditions ZnO-filled opals defined for maximal intensity UV-luminescence. It is shown use "raw" incomplete filling pores semiconducting material increase edge excitonic several times Angular dependences photoluminescence reflectance spectra ZnO-infiltrated have been studied. These results can be used create effective laser light sources range using "photonic crystal" effect.