Growth and properties of YSr/sub 2/Cu/sub 2.75/Mo/sub 0.25/O/sub 7-/spl delta// thin films

摘要: We report on the epitaxial growth of YSr/sub 2/Cu/sub 2.75/Mo/sub 0.25/O/sub 7-/spl delta// (YSCMO) thin films by pulsed laser ablation, and discuss superconducting find normal state transport properties microbridges patterned from such films. To investigate dopant oxygen mobility this material, we have used electrical biases applied at near room temperature to induce long range displacement chain vacancies in these microbridges. that with electromigration, T/sub c/ can be raised |60 K. This transition is higher than any previously achieved for compound, including c/'s achieved. As result extended very high pressure anneals, or situ measurements. Micro-Raman spectroscopy measurements been examine characterize order film before After electromigration. These indicate that, as suggested final achieved, a degree oxygenation induced microbridge process. Thus as-grown YSCMO appear dominated low level homogeneity obtained annealing processes.