Theory of interband tunneling in crystals with impurities

摘要: Abstract A general theory is presented for the intraband and interband processes of electrons in a crystal with static impurities strong electric field. The tunneling processes, both impurity-assisted Zener (and its modification by impurities), are examined detail. For case from fully occupied band, dependence rate on field shown cases to exhibit steady term some oscillatory terms, agreement recent experimental findings.