Self-aligned InP DHBT with f/sub /spl tau// and f/sub max/ over 300 GHz in a new manufacturable technology
作者： G. He , J. Howard , M. Le , P. Partyka , B. Li
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摘要: We report self-aligned indium-phosphide double-heterojunction bipolar transistor devices in a new manufacturable technology with both cutoff frequency (f/sub /spl tau//) and maximum oscillation max/) over 300 GHz open-base breakdown voltage (BV/sub ceo/) 4 V. Logic circuits fabricated using these production integrated-circuit process achieved current-mode logic ring-oscillator gate delay of 1.95 ps an emitter-coupled static-divider 152 GHz, which closely matched model-based circuit simulations.
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J.-S. Rieh, B. Jagannathan, H. Chen, K.T. Schonenberg, D. Angell, A. Chinthakindi, J. Florkey, F. Golan, D. Greenberg, S.-J. Jeng, M. Khater, F. Pagette, C. Schnabel, P. Smith, A. Stricker, K. Vaed, R. Volant, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, SiGe HBTs with cut-off frequency of 350 GHz international electron devices meeting. pp. 771- 774 ,(2002) , 10.1109/IEDM.2002.1175952
K. Ishii, H. Nosaka, M. Ida, K. Kurishima, T. Shibata, 3.21 ps ECL gate using InP/InGaAs DHBT technology Electronics Letters. ,vol. 39, pp. 1434- 1436 ,(2003) , 10.1049/EL:20030940
B. Jagannathan, M. Khater, F. Pagette, J.-S. Rieh, D. Angell, H. Chen, J. Florkey, F. Golan, D.R. Greenberg, R. Groves, S.J. Jeng, J. Johnson, E. Mengistu, K.T. Schonenberg, C.M. Schnabel, P. Smith, A. Stricker, D. Ahlgren, G. Freeman, K. Stein, S. Subbanna, Self-aligned SiGe NPN transistors with 285 GHz f/sub MAX/ and 207 GHz f/sub T/ in a manufacturable technology IEEE Electron Device Letters. ,vol. 23, pp. 258- 260 ,(2002) , 10.1109/55.998869
C.C. McAndrew, J.A. Seitchik, D.F. Bowers, M. Dunn, M. Foisy, I. Getreu, M. McSwain, S. Moinian, J. Parker, D.J. Roulston, M. Schroter, P. van Wijnen, L.F. Wagner, VBIC95, the vertical bipolar inter-company model IEEE Journal of Solid-state Circuits. ,vol. 31, pp. 1476- 1483 ,(1996) , 10.1109/4.540058
B. Jagannathan, M. Meghelli, K. Chan, Jae-Sung Rieh, K. Schonenberg, D. Ahlgren, S. Subbanna, G. Freeman, 3.9 ps SiGe HBT ECL ring oscillator and transistor design for minimum gate delay IEEE Electron Device Letters. ,vol. 24, pp. 324- 326 ,(2003) , 10.1109/LED.2003.812568
M. Mokhtari, C. Fields, R.D. Rajavel, M. Sokolich, J.F. Jensen, W.E. Stanchina, 100+ GHz static divide-by-2 circuit in InP-DHBT technology IEEE Journal of Solid-state Circuits. ,vol. 38, pp. 291- 293 ,(2002) , 10.1109/JSSC.2003.815921
A. Hendarman, E.A. Sovero, K. Witt, Xin Xu, STS-768 multiplexer with full rate output data retimer in InP HBT IEEE Journal of Solid-state Circuits. ,vol. 38, pp. 1497- 1503 ,(2002) , 10.1109/JSSC.2003.815919
N. Watanabe, M. Ida, K. Kurishima, K. Ishii, High-speed InP/InGaAs DHBTs with a thin pseudomorphic base 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.. pp. 211- 214 ,(2003) , 10.1109/GAAS.2003.1252396
H. Rucker, B. Heinemann, R. Barth, D. Bolze, J. Drews, U. Haak, W. Hoppner, D. Knoll, K. Kopke, S. Marschmeyer, H.H. Richter, P. Schley, D. Schmidt, R. Scholz, B. Tillack, W. Winkler, H.-E. Wulf, Y. Yamamoto, SiGe:C BiCMOS technology with 3.6 ps gate delay international electron devices meeting. ,(2003) , 10.1109/IEDM.2003.1269180
A. Rylyakov, T. Zwick, 96 GHz static frequency divider in SiGe bipolar technology 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.. pp. 211- 214 ,(2003) , 10.1109/GAAS.2003.1252413