摘要: Hydrogenated a-Si, whose properties can be modified by impurity doping, produced either decomposition of silane or reactive sputtering Si in an argon-hydrogen plasma. This article reviews advances made during the past few years preparation and characterization films second method. The basic deposition conditions are summarized. conclusions analytical studies (photo-emission, infrared spectroscopy, volumetric measurements evolved gases), regarding amount hydrogen its bonding configuration network, outlined. optical, carrier transport, photoconductivity photoluminescence as a function content doping described. Electron drift mobilities, deduced from steady state transient presented. transport recombination discussed with existing models amorphous semiconductors, found to consistent atomic relaxations, i.e. polaronic effects.
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