Magnetic and electronic properties in hole-doped manganese oxides with layered structures: La 1 − x Sr 1 + x MnO 4

摘要: Electrical resistivity (\ensuremath{\rho}) and magnetic susceptibility (\ensuremath{\chi}) were measured for single crystals of ${\mathrm{La}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Sr}}_{1+\mathit{x}}$${\mathrm{MnO}}_{4}$ (0.0\ensuremath{\le}x\ensuremath{\le}0.7), which grown by the floating-zone method with varying nominal hole concentration (x). With doping, critical temperature (${\mathit{T}}_{\mathit{N}}$) antiferromagnetic phase transition decreases eventually a spin-glass appears x\ensuremath{\ge}0.2, perhaps due to competition between generic superexchange interaction ferromagnetic double-exchange interaction. At x\ensuremath{\approxeq}1/2, real-space ordering doped holes occurs at \ensuremath{\sim}220 K, accompanying steep increase \ensuremath{\rho} as well suppression \ensuremath{\chi}.