作者: Abdelhak Jrad , Wafa Naffouti , Tarek Ben Nasr , Najoua Turki-Kamoun
DOI: 10.1016/J.JLUMIN.2016.01.016
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摘要: Abstract ZnS thin films were prepared by chemical bath deposition on glass substrates using different concentrations of gallium (y=[Ga3+]/[Zn2+]) varying from 0 to 10 at% a step 2 at%. Samples characterized X-ray diffraction, spectrophotometric measurements and photoluminescence spectroscopy. The structural studies revealed that the poorly crystalline. level residual strain dislocation seemed be reduced, respectively, values 0.18% 2.62×109 lines.mm−2 for y=6 at%. Optical analysis means transmittance T ( λ ) reflectance R allowed us determine band gap energy value varied in range [3.60–3.76] eV, which promoted use this material as an optical window or buffer layer solar cell devices. refractive index dispersion was adequately described Wemple–DiDomenico model. oscillator E , d high-frequency dielectric constant e ∞ well ratio carrier concentration effective mass N/m* estimated according both Spitzer–Fan models. Photoluminescence spectroscopy performed ZnS:Ga quenching effect.