Surface Study of Anodized Indium Antimonide
作者： Roland Y. Hung , Eugene T. Yon
DOI: 10.1063/1.1659187
关键词:
摘要: The surface properties of the anodized oxide/InSb system have been studied using metal‐oxide‐semi‐conductor structures. It was found that state charges are negative in general. This charge comes from following two sources: acceptor‐type on real InSb and positively charged trap levels oxide. There is also evidence sets exist oxide, with relaxation time as characteristic difference. Electron Microprobe Analyzer employed this investigation to evaluate chemical composition oxide well layer InSb. achieved by regulating accelerating voltage control depth electron penetration.
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