An approach to threading dislocation ‘‘reaction kinetics’’

作者: A. E. Romanov , W. Pompe , G. E. Beltz , J. S. Speck

DOI: 10.1063/1.117300

关键词:

摘要: An approach is developed to describe the evolution of threading dislocation (TD) densities in lattice‐mismatched epitaxial films. TD ensembles are treated close correspondence chemical species reaction kinetics. ‘‘Reaction rate’’ equations derived for changing density with increasing film thickness first‐ and second‐order reactions. Selective area growth an example a first‐order reaction. annihilation, fusion, scattering examples Analytic models behavior relaxed homogeneous buffer layers, selective growth, strained layers.

参考文章(1)
Jeffrey Y. Tsao, James P. Harbison, Materials Fundamentals of Molecular Beam Epitaxy ,(1992)