Optical properties of self-assembled InAs quantum dots grown on GaAs(211)A substrate
作者： A Sugimura , K Ohnishi , I Umezu , P.O Vaccaro
DOI: 10.1016/S0040-6090(00)01477-2
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摘要: Abstract We have investigated the photoluminescence (PL) and growth properties of self-assembled InAs/GaAs quantum dots (QD) grown on (211)A-oriented GaAs substrate in a low coverage region. At onset QD formation Stranski–Krastanov mode, structures (211)A were quite different from those (100) substrate. The uniformity size distribution was better density higher than that found PL peak at 1.32 eV when InAs 1.57 ML. Another gradually appeared 1.37–1.42 with increasing coverage. peaks attributed to emission defect-related typical QD, respectively. When exceeded 1.89 ML, decreased coverage, due coalescence QD. samples studied here showed spectra having larger intensity narrower full width half-maximum compared
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