Metallization Studies on Epitaxial 6H-SiC
作者： J. Crofton , J. M. Ferrero , P. A. Barnes , J. R. Williams , M. J. Bozack
DOI: 10.1007/978-3-642-84804-9_25
关键词:
摘要: A study of electrical and physical data for metals deposited on n p—type epitaxial 6H—SiC is reported. The investigated were Ni, NiCr, W, TiW, Al. Electrical characterization included IV CV Schottky contacts specific contact resistance ohmic contacts. surface preparation prior to metallization was found be critical the quality formed. near region metal—semiconductor interface using Rutherford Backscattering (RBS) light ion channeling (LIC) detect interdiffusion lattice damage. scattering experiments complimented with Auger Electron Spectroscopy (AES) X—ray Photoelectron (XPS) measurements. Surface morphology SEM analysis including Energy Dispersive (EDX) analysis.
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