Low modulation bias InGaN-based integrated EA-modulator-laser on semipolar GaN substrate
作者： Chao Shen , John Leonard , Arash Pourhashemi , Hassan Oubei , Mohd Sharizal Alias
DOI: 10.1109/IPCON.2015.7323637
关键词:
摘要: In summary, we demonstrated the monolithic integration of electroabsorption modulator with laser diode and measured DC AC modulation characteristics device, which is grown on (2021) plane GaN substrate. By alternating voltage at −3.5 V 0 V, achieve output power 9 mW, respectively, leading to ∼8.1 dB On/Off ratio. Our results clearly show that a low consumption can be achieved semipolar EA-modulator compared c-plane devices.
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