Semiconductor quantum dots : intraband electronic, optical and carrier dynamical properties

摘要: Brief fabricational and applications surveys on semiconductor quantum dots the subsequent motivation for further development of theoretical modeling are presented. In order to study electronic structure dots, k • p models introduced. Both 8 band model effective mass were used in rods. Existence bound state continuum rods is demonstrated. The vibrational electron–phonon interaction was studied via bulk self assembled colloidal dots. concept polarons due very strong electron–longitudinal optical phonon demonstrated single dot supercrystal Lattice anharmonicity also considered as a main mechanism enabling non-radiative relaxation process Optical properties such 3D confinement structures modeled using dipole Hamiltonian approximation properly incorporated into k•p formalism within framework linear response theory. Radiative lifetimes correlation between them established. Transport supercrystals Variational polaron theory introduced examine formation dependent temperature, interdot coupling strength strengths interactions. It found that small occurs at room temperature possible couplings. narrows bands localizes carriers inside each supercrystal. Available experimental data issue discussed by results model.