Inverse TMR in a nominally symmetric CoFe/AlOx/CoFe junction induced by interfacial Fe3O4 investigated by STEM-EELS
作者： Fengyuan Shi , Hua Xiang , J. Joshua Yang , M.S Rzchowski , Y.A. Chang
DOI: 10.1016/J.JMMM.2012.01.012
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摘要: Abstract We have found inverse tunneling magnetoresistance (TMR) with a non-symmetric bias voltage dependence in nominally symmetric Si (001)/Ag/CoFe/AlO x /CoFe/IrMn/Ag magnetic tunnel junction after field cooling. The O K edge fine structure extracted from electron energy loss spectroscopy spectrum images taken at the interfaces of junctions TMR shows thin, discontinuous Fe 3 4 layer CoFe/AlO interfaces. L 2,3 core level shifts are also consistent those . find no normal TMR. believe this is responsible for
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