Growth and characterization of GaPN by OMVPE
作者： Akihiro Wakahara , Yuzo Furukawa , Shinya Itoh , Susumu Hatakenaka , Hiroo Yonezu
DOI: 10.1016/J.JCRYSGRO.2006.11.024
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摘要: Growth properties of GaPN layer by organometallic vapor phase epitaxy (OMVPE) have been investigated. The effect growth temperature on the nitrogen contents reveals that content is limited thermal desorption related species. energy species not dependent group-V composition. From photoluminescence (PL) measurement, post annealing in pure effective to improve PL intensity, but effects slightly different from samples grown molecular beam epitaxy.
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