Spin transfer MRAM device with separated CPP assisted writing

摘要: A spin-transfer MRAM is described that has two sub-cells each having a conductive spacer between an upper CPP cell and lower MTJ cell. The spacers in bit are linked by transistor which controlled write word line. cells have different resistance states the sub-cell states. free layer rotates response to switching because of large demagnetization field exerted layer. An improved circuit design disclosed enables faster more reliable read process since reference second within same When R MTJ1 >R MTJ2 , “0” state, when