作者: Shuji Nakamura , James Stephen Speck , Tal Margalith , Steven P. DenBaars , Michael D. Craven
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摘要: A method for forming non-polar (Al,B,In,Ga)N quantum well and heterostructure materials devices. Non-polar (11{overscore (2)}0) a-plane GaN layers are grown on an r-plane (1{overscore (1)}02) sapphire substrate using MOCVD. These comprise templates producing (Al, B, In, Ga)N