Focused ion beam assisted deposition of nanostructures at elevated substrate temperatures

摘要: Abstract Nanostructures of Pt, W and C have been fabricated on Si substrate by ion induced cracking the appropriate precursor gas molecules employing Ga ions at constant beam parameters increasing temperatures. The nanopillars exhibit variation in physical, morphological compositional properties as a function temperature parameters. These results tried to understand basis dependent sticking tendency substrate, thermal desorption process adsorbed molecules, it’s interaction with ions, etc.