Trench mosfet with integrated schottky barrier diode
作者： Daniel Calafut , Hamza Yilmaz , Jongoh Kim , Yi Su , Hong Chang
DOI:
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摘要: A Schottky diode includes a semiconductor layer formed on substrate; first and second trenches in the where are lined with thin dielectric being filled partially trench conductor remaining portions of layer; metal top surface between trench. The is as anode cathode. each electrically connected to diode. In one embodiment, integrated field effect transistor same substrate.
lens.org 参考文章(32)
Anup Bhalla, Sik K. Lui, Yi Su, Structures and methods for forming schottky diodes on a p-substrate or a bottom anode schottky diode ,(2007)
François Hébert, Allen Chang, Multi-die DC-DC Buck Power Converter with Efficient Packaging ,(2007)
Moses Ho, Xiaobin Wang, Anup Bhalla, Enhancing schottky breakdown voltage (bv) without affecting an integrated mosfet-schottky device layout ,(2007)
Oliver Blank, Ralf Siemieniec, Christian Geissler, Franz Hirler, Maximilian Roesch, Semiconductor component having a space saving edge structure ,(2007)
François Hébert, Bottom anode schottky diode structure and method ,(2007)
Anup Bhalla, Madhur Bobde, TingGang Zhu, Lingpeng Guan, Integrated Schottky diode in high voltage semiconductor device ,(2009)
Anup Bhalla, Madhur Bobde, Yeeheng Lee, Lingpeng Guan, Xiaobin Wang, John Chen, Hamza Yilmaz, Configurations and methods for manufacturing devices with trench-oxide-nano-tube super-junctions ,(2010)
Wai-Keung Peter Cheng, Allen Chang, High voltage and high power boost converter with co-packaged Schottky diode ,(2007)
Anup Bhalla, Sik Lui, Daniel Ng, Yi Su, Approach to integrate Schottky in MOSFET ,(2011)