作者: S. Nakhaie , J. M. Wofford , T. Schumann , U. Jahn , M. Ramsteiner
DOI: 10.1063/1.4921921
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摘要: Hexagonal boron nitride (h-BN) is a layered two-dimensional material with properties that make it promising as dielectric in various applications. We report the growth of h-BN films on Ni foils from elemental B and N using molecular beam epitaxy. The presence crystalline over entire substrate confirmed by Raman spectroscopy. Atomic force microscopy used to examine morphology continuity synthesized films. A scanning electron study obtained shorter depositions offers insight into nucleation behavior substrate. was found evolve dendritic, star-shaped islands larger, smooth triangular ones increasing temperature.