作者: Naoya Kawakami , Chun-Liang Lin , Maki Kawai , Ryuichi Arafune , Noriaki Takagi
DOI: 10.1063/1.4927206
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摘要: The geometric and electronic structures of the Bi thin film grown on Si(111) were investigated by using scanning tunneling microscopy spectroscopy. We have found two types edges, one which hosts an state localized one-dimensionally. also revealed energy dispersion edge from evolution quasiparticle interference patterns as a function energy. These spectroscopic findings well reproduce those acquired for cleaved surface bulk crystal [I. K. Drozdov et al., Nat. Phys. 10, 664 (2014)]. present results indicate that deposited provides tractable stage further scrutiny one-dimensional state.