PHOTODETECTOR ELEMENT AND MANUFACTURE THEREOF

摘要: PURPOSE:To obtain a photodetector element, whose dark current is decreased with respect to the element such as photodiode. CONSTITUTION:Impurities, conductivity type reverse one-conductivity HgCdTe substrate (P type) 1, are introduced into specified pattern. An n-type layer (pixel region) 11 comprising p-n junction region provided in element. In this distribution of concentration impurity carrier made steep at central part but gentle peripheral part.