摘要: The transient temperature and stress distributions during the turn-on cycle of sub-THz vacuum electron devices (VEDs) are evaluated, thereby providing an explanation for high environment created at material surface causing fatigue failure. Furthermore, it is shown that there tensile stresses occur beneath out phase from compressive can be cause cracks observed in previously reported experimental data. High-frequency VEDs provide millimeter-wave radiation sources many applications space communication medical imaging to remote chemical, biological, weapon’s detection. Lifetime estimates presented using stress-based strain-based approaches such based on their peak operating low as well conditions.